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LTE ´ë¿ª°áÇÕ±â Part.2

´ë¿ª°áÇÕ±â No.24 (»ó¼¼)

LTE ´ë¿ª°áÇÕ±â
DUPLEXER,±¤Áß°è±â¿ë,2G-3G,150W,2N




  • Device Type Cavity Duplexer
    Interface N Female
    Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ 824~849, 869~894, 1920~1980, 2110~2170 MHz
    ÀúÇ×(mpedance) 50 ¥Ø
    ¹Ý»ç¼Õ½Ç 18dB
    »ðÀÔ¼Õ½Ç -0.6 dB (max.)
    Ripple -0.3 dB (max.)
    Rejection 35 dBc (min.)
    PIMD 3rd -140 , 5rd -160 dBc (relative to carrier)
    IMD Test Method Two +43 dBm carriers
    Average Power, maximum 150 W
    Operating Temperature / Humidity -40 ~ +70 ¡ÆC / Up to 95%
    Inner Contact Plating Silver Plated
    Outer Contact Plating SUCO (Alloy of Cu/ Sn/ Zn) Plated
    Ingress Protection Test Method IEC 60529:2001, IP65