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LTE ´ë¿ª°áÇÕ±â Part.2

´ë¿ª°áÇÕ±â No.26 (»ó¼¼)

LTE ´ë¿ª°áÇÕ±â
DBD-2N-150W(2G-3G/Wi)




  • Device Type Cavity Duplexer
    Interface N Female
    Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ 824~894, 1880~2400 MHz
    ÀúÇ×(mpedance) 50 ¥Ø
    ¹Ý»ç¼Õ½Ç 18dB
    »ðÀÔ¼Õ½Ç -0.25 dB (max.)
    Æ÷Æ®°£ºÐ¸®µµ -55 dBc (min.)
    3rd Order IMD 3rd -140 , 5rd -160 dBc (relative to carrier)
    3rd Order IMD Test Method Two +43 dBm carriers
    Average Power, maximum 50 W
    Operating Temperature / Humidity -33 ~ +60 ¡ÆC / Up to 95%
    Inner Contact Plating Silver Plated
    Outer Contact Plating SUCO (Alloy of Cu/ Sn/ Zn) Plated
    Ingress Protection Test Method IEC 60529:2001, IP65