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LTE ´ë¿ª°áÇÕ±â Part.2


| Device Type |
Cavity
|
|---|---|
| Interface | N Female |
| Åë°ú´ë¿ª Á֯ļö ¹üÀ§ | 824~849, 1920~2170, 2300~2400, 2630~2655 MHz |
| ÀúÇ×(mpedance) | 50 ¥Ø |
| ¹Ý»ç¼Õ½Ç | 18dB |
| »ðÀÔ¼Õ½Ç | -0.7 dB (max.) |
| Ripple | -0.3 dB (max.) |
| Rejection | 50dB (min) @ WiBro,DMB |
| 3rd Order IMD | -150 dBc (relative to carrier) |
| 3rd Order IMD Test Method |
Two +43 dBm carriers
|
| Average Power, maximum | 50 W |
| Operating Temperature / Humidity | -33 ~ +60 ¡ÆC / Up to 95% |
| Inner Contact Plating | Silver Plated |
| Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
| Ingress Protection Test Method | IEC 60529:2001, IP65 |