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LTE ´ë¿ª°áÇÕ±â Part.2

´ë¿ª°áÇÕ±â No.27 (»ó¼¼)

LTE ´ë¿ª°áÇÕ±â
Áß°è±â°áÇÕ±â : QBD-3N-100




  • Device Type Cavity
    Interface N Female
    Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ 824~849, 1920~2170, 2300~2400, 2630~2655 MHz
    ÀúÇ×(mpedance) 50 ¥Ø
    ¹Ý»ç¼Õ½Ç 18dB
    »ðÀÔ¼Õ½Ç -0.7 dB (max.)
    Ripple -0.3 dB (max.)
    Rejection 50dB (min) @ WiBro,DMB
    3rd Order IMD -150 dBc (relative to carrier)
    3rd Order IMD Test Method Two +43 dBm carriers
    Average Power, maximum 50 W
    Operating Temperature / Humidity -33 ~ +60 ¡ÆC / Up to 95%
    Inner Contact Plating Silver Plated
    Outer Contact Plating SUCO (Alloy of Cu/ Sn/ Zn) Plated
    Ingress Protection Test Method IEC 60529:2001, IP65