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LTE ´ë¿ª°áÇÕ±â Part.2
Device Type |
Cavity
|
---|---|
Interface | N Female |
Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ | 824~849, 1920~2170, 2300~2400, 2630~2655 MHz |
ÀúÇ×(mpedance) | 50 ¥Ø |
¹Ý»ç¼Õ½Ç | 18dB |
»ðÀÔ¼Õ½Ç | -0.7 dB (max.) |
Ripple | -0.3 dB (max.) |
Rejection | 50dB (min) @ WiBro,DMB |
3rd Order IMD | -150 dBc (relative to carrier) |
3rd Order IMD Test Method |
Two +43 dBm carriers
|
Average Power, maximum | 50 W |
Operating Temperature / Humidity | -33 ~ +60 ¡ÆC / Up to 95% |
Inner Contact Plating | Silver Plated |
Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
Ingress Protection Test Method | IEC 60529:2001, IP65 |