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LTE ´ë¿ª°áÇÕ±â Part.3

´ë¿ª°áÇÕ±â No.43 (»ó¼¼)

LTE ´ë¿ª°áÇÕ±â
FBC-2P-200
(0.8~1.8/2.1~2.6, MiBOS)




  • Åë°ú´ë¿ª ÁÖÆļö ¹üÀ§ 800M / 824~894MHz
    1.8G / 1710~1830MHz
    2.1G / 1930~2150MHz
    2.6G / 25000~2670MHz
    ÀúÇ×(mpedance) 50 ¥Ø
    ¹Ý»ç¼Õ½Ç 18dB
    »ðÀÔ¼Õ½Ç -0.3 dB (max.)
    Rejection -50 dB (min.)
    IMD -150 dBc ÀÌÇÏ
    IMD Test Method Two +43 dBm carriers
    Average Power, maximum 100W
    Operating Temperature / Humidity -30 ~ +60 ¡ÆC / Up to 95%
    Inner Contact Plating Silver Plated
    Outer Contact Plating SUCO (Alloy of Cu/ Sn/ Zn) Plated
    Ingress Protection Test Method IEC 60529:2001, IP65