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LTE ´ë¿ª°áÇÕ±â Part.3


| Åë°ú´ë¿ª Á֯ļö ¹üÀ§ |
800M / 824~894MHz 1.8G / 1710~1830MHz 2.1G / 1930~2150MHz 2.6G / 2500~2670MHz |
|---|---|
| ÀúÇ×(mpedance) | 50 ¥Ø |
| ¹Ý»ç¼Õ½Ç | 18dB |
| »ðÀÔ¼Õ½Ç | -0.3 dB (max.) |
| Rejection | -50 dB (min.) |
| IMD | -150 dBc ÀÌÇÏ |
| IMD Test Method |
Two +43 dBm carriers
|
| Average Power, maximum | 100W |
| Operating Temperature / Humidity | -40 ~ +70 ¡ÆC / Up to 95% |
| Inner Contact Plating | Silver Plated |
| Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
| Ingress Protection Test Method | IEC 60529:2001, IP65 |