(ÁÖ)¸µÅ©ÅØ
LTE ´ë¿ª°áÇÕ±â Part.3


| Åë°ú´ë¿ª Á֯ļö ¹üÀ§ |
P1-P3 / 0.8G / 824~894MHz P1-P3 / 1.8G / 1710~2150MHz P1-P3 / 2.1G / 1710~2150MHz P2-P3 / 2.6G / 2500~2670MHz |
|---|---|
| ÀúÇ×(mpedance) | 50 ¥Ø |
| ¹Ý»ç¼Õ½Ç | 18dB |
| »ðÀÔ¼Õ½Ç | -0.3 dB |
| Rejection | -50 dB (min.) |
| IMD |
3Â÷ 150dBc min (800M, 2.6G) 5Â÷ 160dBc min (1.8G/2.1G) |
| IMD Test Method |
Two +43 dBm carriers
|
| Average Power, maximum | 200W |
| Operating Temperature / Humidity | -40 ~ +70 ¡ÆC / Up to 95% |
| Inner Contact Plating | Silver Plated |
| Outer Contact Plating | SUCO (Alloy of Cu/ Sn/ Zn) Plated |
| Ingress Protection Test Method | IEC 60529:2001, IP65 |